Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device

Abstract

We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. The Coulomb drag resistivity is a direct measure of the strength of the interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter $r_s$ up to 14). Our ambipolar device design allows comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions, and also shows the effects of the different effective masses of electrons and holes in GaAs.

arXiv comment4 pages, 3 figures

References in corpus (14)

• Bose-Einstein Condensation of Excitons in Bilayer Electron Systems
• Strong Coulomb drag and broken symmetry in double-layer graphene
• Room-Temperature Superfluidity in Graphene Bilayers
• Coulomb drag between two-dimensional electron systems
• Coulomb drag between disordered two-dimensional electron gas layers
• Excitonic condensation in a symmetric electron-hole bilayer
• Coulomb Drag in the Exciton Regime in Electron-Hole Bilayers
• Anomalous Coulomb drag in electron-hole bilayers
• Correlation Effects on the Coupled Plasmon Modes of a Double Quantum Well
• Frictional Drag between Two Dilute Two-Dimensional Hole Layers
• Undoped Electron-Hole Bilayers in a GaAs/AlGaAs Double Quantum Well
• Evidence for 2k_F Electron-Electron Scattering Processes in Coulomb Drag
• Frictional drag in dilute bilayer 2D hole systems
• Transport and drag in undoped electron-hole bilayers

Cited by in corpus (3)

• Experimental conditions for observation of electron-hole superfluidity in GaAs heterostructures
• A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs systems
• Correlation functions in electron-electron and electron-hole double quantum wells: Temperature, density and barrier-width dependence