Transport and drag in undoped electron-hole bilayers
arXiv:0804.3311 · doi:10.1103/PhysRevB.78.075430
Abstract
We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double quantum well systems. Our results indicate that the background charged impurity scattering is the most dominant resistive scattering mechanism in the high-mobility bilyers. We also find that the drag transresistivity is significantly enhanced when the electron-hole layer separation is small due to the exchange induced renormalization of the single layer compressibility.
7 pages 3 figures
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- Anomalous Coulomb drag in electron-hole bilayers
- Density imbalance effect on the Coulomb drag upturn in an electron-hole bialyer
- Possible effect of collective modes in zero magnetic field transport in an electron-hole bilayer
- Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device
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- 2D bilayer electron-hole superfluidity with unequal and anisotropic masses