activity
20102024
most citedFabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

40 citations · 107 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2024★ 1 cited

Artificial electrostatic crystals: a new platform for creating correlated quantum states

Daisy Q. Wang, Zeb Krix, Olga A. Tkachenko +7

The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including supercond…

cond-mat.mes-hall2015★ 18 cited

Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device

B. Zheng, A. F. Croxall, J. Waldie +5

We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, w…

cond-mat.mes-hall2012★ 40 cited

Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

J. C. H. Chen, D. Q. Wang, O. Klochan +7

We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bia…

cond-mat.mes-hall2011★ 19 cited

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas

W. Y. Mak, F. Sfigakis, K. Das Gupta +7

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitax…

cond-mat.mes-hall2010★ 29 cited

Distinguishing impurity concentrations in GaAs and AlGaAs, using very shallow undoped heterostructures

W. Y. Mak, K. Das Gupta, H. E. Beere +3

We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structur…