activity
20072023
most citedAll-electric all-semiconductor spin field effect transistors

364 citations · 1.3k across the 25 of their papers we have counts for

collaborators

25 papers

cond-mat.mes-hall2023★ 3 cited

Stable electroluminescence in ambipolar dopant-free lateral p-n junctions

Lin Tian, Francois Sfigakis, Arjun Shetty +11

Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers…

cond-mat.mes-hall2022★ 4 cited

Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells

E. Annelise Bergeron, F. Sfigakis, Y. Shi +6

We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum…

cond-mat.mtrl-sci2021★ 8 cited

Temperature dependent angular dispersions of surface acoustic waves on GaAs

Mats Powlowski, Francois Sfigakis, Na Young Kim

We measure the phase velocities of surface acoustic waves (SAWs) propagating at different crystal orientations on (001)-cut GaAs substrates and their temperature dependance. We des…

cond-mat.mes-hall2021★ 9 cited

Non-adiabatic single-electron pump in a dopant-free GaAs/AlGaAs 2DEG

B. Buonacorsi, F. Sfigakis, A. Shetty +7

We have realized quantized charge pumping using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allow…

cond-mat.mes-hall2020★ 2 cited

Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs

A. Shetty, F. Sfigakis, W. Y. Mak +16

Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positiv…

cond-mat.mes-hall2019★ 3 cited

Orientation of hole quantum Hall nematic phases in an out-of-plane electric field

A. F. Croxall, F. Sfigakis, J. Waldie +2

We present observations of an anisotropic resistance state at Landau level filling factor in a two-dimensional hole system (2DHS), which occurs for certain values of hole d…