Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures

Abstract

We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample configurations can be set in situ with mobilities diering by a factor of more than two in a wide range of densities. This observation is discussed in view of charge redistributions between the doping layers and is relevant for the design of future gateable high-mobility electron gases.

References in corpus (1)

• Limit to 2D mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 millions

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