Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures

Abstract

We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample configurations can be set in situ with mobilities diering by a factor of more than two in a wide range of densities. This observation is discussed in view of charge redistributions between the doping layers and is relevant for the design of future gateable high-mobility electron gases.

References in corpus (3)

• Towards identification of a non-abelian state: observation of a quarter of electron charge at $\nu =5/2$ quantum Hall state
• Limit to 2D mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 millions
• Fractional quantum Hall effect in a quantum point contact at filling fraction 5/2

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• Increasing the ν = 5 / 2 gap energy: an analysis of MBE growth parameters
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• Magnetic-field-driven topological transitions in non-centrally-symmetric energy spectrum of 2D electron gas with Rashba-Dresselhaus spin-orbit interaction
• Commensurability resonances in two-dimensional magneto-electric lateral superlattices
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• Tunable Charge Detectors for Semiconductor Quantum Circuits
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• Screening effects of superlattice doping on the mobility of GaAs two-dimensional electron system revealed by in-situ gate control
• Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure
• Edge reconstruction of compressible Quantum Hall fluid in the filling fraction range 1/3 to 2/3