Tunable Charge Detectors for Semiconductor Quantum Circuits
arXiv:1209.4447 · doi:10.1088/1367-2630/15/3/033011
Abstract
Nanostructures defined in high-mobility two-dimensional electron systems offer a unique way of controlling the microscopic details of the investigated device. Quantum point contacts play a key role in these investigations, since they are not only a research topic themselves, but turn out to serve as convenient and powerful detectors for their electrostatic environment. We investigate how the sensitivity of charge detectors can be further improved by reducing screening, increasing the capacitive coupling between charge and detector and by tuning the quantum point contacts' confinement potential into the shape of a localized state. We demonstrate the benefits of utilizing a localized state by performing fast and well-resolved charge detection of a large quantum dot in the quantum Hall regime.
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Cited by in corpus (8)
- Measurement back-action in stacked graphene quantum dots
- Fermion-parity duality and energy relaxation in interacting open systems
- Observing the universal screening of a Kondo impurity
- Measuring cotunneling in its wake
- Revealing attractive electron-electron interaction in a quantum dot by full counting statistics
- Interplay of fractional quantum Hall states and localization in quantum point contacts
- Charge states, triple points and quadruple points in an InAs nanowire triple quantum dot revealed by an integrated charge sensor
- Capacitive coupling in hybrid Graphene-GaAs nanostructures