Noise-induced spectral shift measured in a Double Quantum Dot

Abstract

We measure the shot noise of a quantum point-contact using a capacitively coupled InAs double quantum dot as an on-chip sensor. Our measurement signals are the (bidirectional) interdot electronic tunneling rates which are determined by means of time-resolved charge sensing. The detector frequency is set by the relative detuning of the energy levels in the two dots. For nonzero detuning, the noise in the quantum point contact generates inelastic tunneling in the double dot and thus causes an increase in the interdot tunneling rate. Conservation of spectral weight in the dots implies that this increase must be compensated by a decrease in the rate close to zero detuning, which is quantitatively confirmed in our experiment.

5 pages, 4 figures

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Cited by in corpus (8)

• Bidirectional Single-Electron Counting and the Fluctuation Theorem
• Tunable Charge Detectors for Semiconductor Quantum Circuits
• Detector-tuned overlap catastrophe in quantum dots
• Realizing the interacting resonant level model using a quantum dot detector
• Coulomb-mediated single-electron heat transfer statistics across capacitively coupled silicon nanodots
• Back-action effects in charge detection
• Influence of a Random Telegraph Process on the Transport through a Point Contact
• Non-symmetrized quantum noise in a Kondo quantum dot