Imaging the lateral shift of a quantum-point contact using scanning-gate microscopy

Abstract

We perform scanning-gate microscopy on a quantum-point contact. It is defined in a high-mobility two-dimensional electron gas of an AlGaAs/GaAs heterostructure, giving rise to a weak disorder potential. The lever arm of the scanning tip is significantly smaller than that of the split gates defining the conducting channel of the quantum-point contact. We are able to observe that the conducting channel is shifted in real space when asymmetric gate voltages are applied. The observed shifts are consistent with transport data and numerical estimations.

5 pages, 3 figures

References in corpus (4)

• Unexpected features of branched flow through high-mobility two-dimensional electron gases
• Transport Properties of Clean Quantum Point Contacts
• Spatially probed electron-electron scattering in a two-dimensional electron gas
• Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures

Cited by in corpus (9)

• Spatially resolved study of backscattering in the quantum spin Hall state
• Theory of scanning gate microscopy
• Interplay of fractional quantum Hall states and localization in quantum point contacts
• Signatures of spin-orbit coupling in scanning gate conductance images of electron flow from quantum point contacts
• Tunable Charge Detectors for Semiconductor Quantum Circuits
• Effect of tilted magnetic field on magnetosubbands and conductance of bi-layer quantum wire
• An electron motion induced by magnetic field pulse in bi-layer quantum wire
• Investigations of local electronic transport in InAs nanowires by scanning gate microscopy at helium temperatures
• Conductance microscopy of quantum dots weakly or strongly coupled to the conducting channel