Theory of scanning gate microscopy

Abstract

A systematic theory of the conductance measurements of non-invasive (weak probe) scanning gate microscopy is presented that provides an interpretation of what precisely is being measured. A scattering approach is used to derive explicit expressions for the first and second order conductance changes due to the perturbation by the tip potential in terms of the scattering states of the unperturbed structure. In the case of a quantum point contact, the first order correction dominates at the conductance steps and vanishes on the plateaus where the second order term dominates. Both corrections are non-local for a generic structure. Only in special cases, such as that of a centrally symmetric quantum point contact in the conductance quantization regime, can the second order correction be unambiguously related with the local current density. In the case of an abrupt quantum point contact we are able to obtain analytic expressions for the scattering eigenfunctions and thus evaluate the resulting conductance corrections.

19 pages, 7 figures

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• Scanning gate microscopy in graphene nanostructures
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• Correlation between peak-height modulation and phase-lapses in transport through quantum dots
• Multitip scanning gate microscopy for ballistic transport studies in systems with two-dimensional electron gas
• Extrinsic thermoelectric response of coherent conductors
• Large deviations in the many-body localization transition: The case of the random-field XXZ chain