Low Temperature Transport in Undoped Mesoscopic Structures

Abstract

Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified. Signature appearances of the scattering length scale arise in confined two dimensional regions, where the zero-bias anomaly (ZBA) is also observed. These results explicitly outline the molecular beam epitaxy growth parameters necessary to obtain ultra low density large two dimensional regions as well as clean reproducible mesoscopic devices.

4 pages, 4 EPS figs

References in corpus (4)

• A Tunable Kondo Effect in Quantum Dots
• The Low-Temperature Fate of the 0.7 Structure in a Point Contact: A Kondo-like Correlated State in an Open System
• Limit to 2D mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 millions
• Resistivity of dilute 2D electrons in an undoped GaAs heterostructure

Cited by in corpus (5)

• Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
• Distinguishing impurity concentrations in GaAs and AlGaAs, using very shallow undoped heterostructures
• Field-effect-induced two-dimensional electron gas utilizing modulation doping for improved ohmic contacts
• Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure
• Resistively loaded coplanar waveguide for microwave measurements of induced carriers