108 citations · 184 across the 7 of their papers we have counts for
7 papers
Long distance electron-electron scattering detected with point contacts
Lev V. Ginzburg, Yuze Wu, Marc P. Röösli +15
We measure electron transport through point contacts in an electron gas in AlGaAs/GaAs heterostructures and graphene for a range of temperatures, magnetic fields and electron densi…
Nonlinear response of 2DEG in the quantum Hall regime
Shuichi Iwakiri, Lev V. Ginzburg, Marc P. Röösli +7
Breaking of inversion symmetry leads to nonlinear and nonreciprocal electron transport, in which the voltage response does not invert with the reversal of the current direction. Ma…
Superballistic electron flow through a point contact in a Ga[Al]As heterostructure
Lev V. Ginzburg, Carolin Gold, Marc P. Röösli +5
We measure electronic transport through point contacts in the high-mobility electron gas in a Ga[Al]As heterostructure at different temperatures and bulk electron densities. The co…
A novel planar back-gate design to control the carrier concentrations in GaAs-based double quantum wells
J. Scharnetzky, J. M. Meyer, M. Berl +4
The precise control of a bilayer system consisting of two adjacent two-dimensional electron gases (2DEG) is demonstrated by using a novel planar back-gate approach based on ion imp…
Stable Branched Electron Flow
B A Braem, C Gold, S Hennel +6
The pattern of branched electron flow revealed by scanning gate microscopy shows the distribution of ballistic electron trajectories. The details of the pattern are determined by t…
Scanning Gate Microscopy in a Viscous Electron Fluid
Beat A Braem, Francesco M D Pellegrino, Alessandro Principi +10
We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscou…
Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using Oxygen Ion Implantation
Matthias Berl, Lars Tiemann, Werner Dietsche +2
We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, ou…