activity
20182021
most citedQuantum transport in high-quality shallow InSb quantum wells

25 citations · 46 across the 3 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2021

High-quality Two-Dimensional Electron Gas in Undoped InSb Quantum Wells

Zijin Lei, Erik Cheah, Km Rubi +7

We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electro…

cond-mat.mes-hall202021 cited

Gate-defined Quantum Point Contact in an InSb Two-dimensional Electron Gas

Zijin Lei, Christian A. Lehner, Erik Cheah +5

We investigate an electrostatically defined quantum point contact in a high-mobility InSb two-dimensional electron gas. Well-defined conductance plateaus are observed, and the subb…

cond-mat.mes-hall2020

Electronic g-factor and Magneto-transport in InSb Quantum Wells

Zijin Lei, Christian A. Lehner, Km Rubi +10

High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the…

cond-mat.mes-hall2019

A Gate-Defined Quantum Point Contact in an InAs Two-Dimensional Electron Gas

Christopher Mittag, Matija Karalic, Zijin Lei +7

We experimentally study quantized conductance in an electrostatically defined constriction in a high-mobility InAs two-dimensional electron gas. A parallel magnetic field lifts the…

cond-mat.mes-hall201925 cited

Quantum transport in high-quality shallow InSb quantum wells

Zijin Lei, Christian A. Lehner, Erik Cheah +7

InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensi…

cond-mat.mes-hall2018

Edgeless and Purely Gate-Defined Nanostructures in InAs Quantum Wells

Christopher Mittag, Matija Karalic, Zijin Lei +4

Nanostructures in InAs quantum wells have so far remained outside of the scope of traditional microfabrication techniques based on etching. This is due to parasitic parallel conduc…