Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

Abstract

We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO${}_2$ substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of ${\Delta }_{ST}\sim 2.3$ meV, a strong spin-orbit interaction of ${\Delta }_{SO}\sim 140$ $\mu$eV, and a large and strongly level-dependent Landé g factor of $\sim 12.5$. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.

arXiv comment15 pages, 4 figures

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Cited by in corpus (10)

• In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices
• Anisotropic Pauli spin-blockade effect and spin-orbit interaction field in an InAs nanowire double quantum dot
• Coherent transport in a linear triple quantum dot made from a pure-phase InAs nanowire
• Control of the Two-Electron Exchange Interaction in a Nanowire Double Quantum Dot
• Gate defined quantum dot realized in a single crystalline InSb nanosheet
• Measurements of spin-orbit interaction in epitaxially grown InAs nanosheets
• Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots
• Charge states, triple points and quadruple points in an InAs nanowire triple quantum dot revealed by an integrated charge sensor
• Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor
• Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages