84 citations · 584 across the 30 of their papers we have counts for
30 papers
Enhancing charge stability of Ge quantum well heterostructures via SiGe layer composition engineering
Ding-Ming Huang, Jun-Hang Liu, Han Gao +10
Composition modulation is a powerful technique for designing materials with tailored properties, fueling the development of advanced semiconductor devices. In this work, we have im…
Microwave Response of the Superconducting Diode Effect in Proximitized Bilayer Graphene Interferometers
Shili Yan, Rubén Seoane Souto, Yi Luo +7
Microwave irradiation has emerged as a promising means to tune the superconducting diode effect (SDE) in Josephson junction devices. Previous experimental studies have mainly focus…
Single-Crystalline Al/Ge Heterostructure with an Atomically Sharp Commensurate Interface
Jian-Huan Wang, Ding-Ming Huang, Han Gao +3
A key challenge in developing Al/Ge heterostructures for quantum applications is Al-Ge interdiffusion. This process is facilitated by grain boundaries in polycrystalline films, whi…
Coupling of quantum-dot states via elastic-cotunneling and crossed Andreev reflection in a minimal Kitaev chain
Zhi-Hai Liu, Chuanchang Zeng, H. Q. Xu
Recently, exciting progress has been made in using the superconducting nanowires coupled to gate-defined quantum dots (QDs) to mimic the Kiteav chain and realize the Majorana-bound…
Ubiquitous missing first Shapiro step in Al-InSb nanosheet Josephson junctions
Xingjun Wu, Haitian Su, Chuanchang Zeng +6
The absence of odd-order Shapiro steps is a predicted signature of topological superconductors. Experimentally, the missing first-order Shapiro step has been reported in both putat…
Microwave-assisted unidirectional superconductivity in Al-InAs nanowire-Al junctions under magnetic fields
Haitian Su, Ji-Yin Wang, Han Gao +10
Under certain symmetry-breaking conditions, a superconducting system exhibits asymmetric critical currents, dubbed the ``superconducting diode effect". Recently, systems with the i…
Scattering description of edge states in Aharonov-Bohm triangle chains
Zhi-Hai Liu, O. Entin-Wohlman, A. Aharony +2
Scattering theory has been suggested as a convenient method to identify topological phases of matter, in particular of disordered systems for which the Bloch band-theory approach i…
Strain effects in twisted spiral antimonene
Ding-Ming Huang, Xu Wu, Kai Chang +4
van der Waals (vdW) layered materials exhibit fruitful novel physical properties. The energy band of such materials depends strongly on their structures and a tremendous variation…
Topological phase transition in a narrow bandgap semiconductor nanolayer
Zhi-Hai Liu, Wenkai Lou, Kai Chang +1
Narrow bandgap semiconductor nanostructures have been explored for realization of topological superconducting quantum devices in which Majorana states can be created and employed f…
Charge states, triple points and quadruple points in an InAs nanowire triple quantum dot revealed by an integrated charge sensor
Weijie Li, Zhihai Liu, Jingwei Mu +4
A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and…
Electron transport properties of a narrow-bandgap semiconductor BiOTe nanosheet
Xiaobo Li, Haitian Su, H. Q. Xu
A thin, narrow-bandgap semiconductor BiOTe nanosheet is obtained via mechanical exfoliation and a Hall-bar device is fabricated from it on a heavily doped Si/SiO substr…
Surface-bulk coupling in a BiTe nanoplate grown by van der Waals epitaxy
Xiaobo Li, Mengmeng Meng, Shaoyun Huang +4
We report on an experimental study of the effect of coherent surface-bulk electron scattering on quantum transport in a three-dimensional topological insulator BiTe nanopla…
Topological charge and spin pumping in a semiconductor nanowire
Zhi-Hai Liu, H. Q. Xu
The adiabatic topological pumping is proposed by periodically modulating a semiconductor nanowire double-quantum-dot chain. We demonstrate that the quantized charge transport can b…
A double quantum dot defined by top gates in a single crystalline InSb nanosheet
Yuanjie Chen, Shaoyun Huang, Jingwei Mu +3
We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular…
Highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire
Jingwei Mu, Shaoyun Huang, Zhi-Hai Liu +7
Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other pl…
Gate defined quantum dot realized in a single crystalline InSb nanosheet
Jianhong Xue, Yuanjie Chen, Dong Pan +4
Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological qua…
Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures
Jiayu Li, Li Lin, Guang-Yao Huang +5
Graphene/hexagonal boron nitride (G/-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under…
Two-dimensional Mott variable-range hopping transport in a disordered MoS nanoflake
Jianhong Xue, Shaoyun Huang, Ji-Yin Wang +1
The transport characteristics of a disordered MoS nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS nanoflake i…
Coherent transport in a linear triple quantum dot made from a pure-phase InAs nanowire
Ji-Yin Wang, Shaoyun Huang, Guang-Yao Huang +3
A highly tunable linear triple quantum dot (TQD) device is realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. The electrical measurement…
Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime
Jiyin Wang, Shaoyun Huang, Zijin Lei +3
We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-p…
Electronic structures of free-standing nanowires made from indirect bandgap semiconductor gallium phosphide
Gaohua Liao, Ning Luo, Ke-Qiu Chen +1
We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)--a III-V semiconductor with an indirect bulk bandgap. We con…
Topological energy gaps in the [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires
Ning Luo, Gaohua Liao, Lin-Hui Ye +1
The [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires have been studied by the Luttinger-Kohn Hamiltonian to search for non-vanishing fu…
Electronic structures of [111]-oriented free-standing InAs and InP nanowires
Gaohua Liao, Ning Luo, Ke-Qiu Chen +1
We report on a theoretical study of the electronic structures of the [111]-oriented, free-standing, zincblende InAs and InP nanowires with hexagonal cross sections by means of an a…
Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a BiSe thin film
Yumei Jing, Shaoyun Huang, Kai Zhang +5
Electron transport properties of a topological insulator BiSe thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epita…