23 citations · 23 across the 1 of their papers we have counts for
4 papers
Gate defined quantum dot realized in a single crystalline InSb nanosheet
Jianhong Xue, Yuanjie Chen, Dong Pan +4
Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological qua…
Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures
Jiayu Li, Li Lin, Guang-Yao Huang +5
Graphene/hexagonal boron nitride (G/-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under…
Coherent transport in a linear triple quantum dot made from a pure-phase InAs nanowire
Ji-Yin Wang, Shaoyun Huang, Guang-Yao Huang +3
A highly tunable linear triple quantum dot (TQD) device is realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. The electrical measurement…
Electronic structures of free-standing nanowires made from indirect bandgap semiconductor gallium phosphide
Gaohua Liao, Ning Luo, Ke-Qiu Chen +1
We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)--a III-V semiconductor with an indirect bulk bandgap. We con…