Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a BiSe thin film
arXiv:1512.04191 · doi:10.1039/c5nr07296d
Abstract
Electron transport properties of a topological insulator BiSe thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are fabricated from the as-grown film directly on the mica substrate. Weak antilocalization and electron-electron interaction effects are observed and analyzed at low temperatures. The phase-coherence length extracted from the measured weak antilocalization characteristics shows a strong power-law increase with decreasing temperature and the transport in the film is shown to occur via coupled multiple (topological surface and bulk states) channels. The conductivity of the film shows a logarithmically decrease with decreasing temperature and thus the electron-electron interaction plays a dominant role in quantum corrections to the conductivity of the film at low temperatures.
12 pages, 5 figures
References in corpus (3)
- Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
- Quantum interference and Aharonov-Bohm oscillations in topological insulators
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