69 citations · 426 across the 18 of their papers we have counts for
18 papers
Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
Li Zhang, Yuanjie Chen, Dong Pan +3
Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and character…
Surface-bulk coupling in a BiTe nanoplate grown by van der Waals epitaxy
Xiaobo Li, Mengmeng Meng, Shaoyun Huang +4
We report on an experimental study of the effect of coherent surface-bulk electron scattering on quantum transport in a three-dimensional topological insulator BiTe nanopla…
Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages
Jingwei Mu, Weijie Li, Shaoyun Huang +5
We report on the realization of a coupled quantum dot (QD) system containing two single QDs made in two adjacent InAs nanowires. One QD (sensor QD) is used as a charge sensor to de…
A double quantum dot defined by top gates in a single crystalline InSb nanosheet
Yuanjie Chen, Shaoyun Huang, Jingwei Mu +3
We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular…
Highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire
Jingwei Mu, Shaoyun Huang, Zhi-Hai Liu +7
Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other pl…
Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet
Yuanjie Chen, Shaoyun Huang, Dong Pan +4
A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap…
Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor
Weijie Li, Jingwei Mu, Shaoyun Huang +3
A linear triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized. The TQD and the charge sensor are built from two adjacent InAs nanowires by fine fin…
Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots
Jingwei Mu, Shaoyun Huang, Ji-Yin Wang +3
We have measured the Zeeman splitting of quantum levels in few-electron quantum dots (QDs) formed in narrow bandgap InSb nanowires via the Schottky barriers at the contacts under a…
Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate
Yumei Jing, Shaoyun Huang, Jinxiong Wu +5
Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for a…
Universal conductance fluctuations and phase-coherent transport in a semiconductor BiOSe nanoplate with strong spin-orbit interaction
Mengmeng Meng, Shaoyun Huang, Congwei Tan +4
We report on phase-coherent transport studies of a BiOSe nanoplate and on observation of universal conductance fluctuations and spin-orbit interaction induced reduction in…
Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale
Dong Pan, Ji-Yin Wang, Wei Zhang +7
Here, we demonstrate an approach that provides a precise control of the dimension of InAs from one-dimensional nanowires to wafer-scale free-standing two-dimensional nanosheets, wh…
Gate defined quantum dot realized in a single crystalline InSb nanosheet
Jianhong Xue, Yuanjie Chen, Dong Pan +4
Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological qua…
Anisotropic Pauli spin-blockade effect and spin-orbit interaction field in an InAs nanowire double quantum dot
Ji-Yin Wang, Guang-Yao Huang, Shaoyun Huang +4
We report on experimental detection of the spin-orbit interaction field in an InAs nanowire double quantum dot device. In the spin blockade regime, leakage current through the doub…
Two-dimensional Mott variable-range hopping transport in a disordered MoS nanoflake
Jianhong Xue, Shaoyun Huang, Ji-Yin Wang +1
The transport characteristics of a disordered MoS nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS nanoflake i…
Strong spin-orbit interaction and magnetotransport in semiconductor BiOSe nanoplates
Mengmeng Meng, Shaoyun Huang, Congwei Tan +4
Semiconductor BiOSe nanolayers of high crystal quality have been realized via epitaxial growth. These two-dimensional (2D) materials possess excellent electron transport pr…
Coherent transport in a linear triple quantum dot made from a pure-phase InAs nanowire
Ji-Yin Wang, Shaoyun Huang, Guang-Yao Huang +3
A highly tunable linear triple quantum dot (TQD) device is realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. The electrical measurement…
Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime
Jiyin Wang, Shaoyun Huang, Zijin Lei +3
We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-p…
Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a BiSe thin film
Yumei Jing, Shaoyun Huang, Kai Zhang +5
Electron transport properties of a topological insulator BiSe thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epita…