Two-dimensional Mott variable-range hopping transport in a disordered MoS nanoflake
arXiv:1801.08932 · doi:10.1039/c9ra03150b
Abstract
The transport characteristics of a disordered MoS nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS nanoflake is exfoliated from a bulk MoS crystal and the conductance and magnetoresistance are measured in a four-probe setup over a wide range of temperatures. At high temperatures, we observe that exhibits a temperature dependence and the transport in the nanoflake dominantly arises from thermal activation. At low temperatures, where the transport in the nanoflake dominantly takes place via variable-range hopping (VRH) processes, we observe that exhibits a temperature dependence, an evidence for the two-dimensional (2D) Mott VRH transport. The measured low-field magnetoresistance of the nanoflake in the insulator regime exhibits a quadratic magnetic field dependence with , fully consistent with the 2D Mott VRH transport in the nanoflake.
arXiv comment14 pages, 4 figures, and Supplemental Materials
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