23 citations · 23 across the 2 of their papers we have counts for
6 papers
Spin-mixing enhanced proximity effect in aluminum-based superconductor-semiconductor hybrids
G. P. Mazur, N. van Loo, J. Y. Wang +13
In superconducting quantum circuits, aluminum is one of the most widely used materials. It is currently also the superconductor of choice for the development of topological qubits.…
Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots
Jingwei Mu, Shaoyun Huang, Ji-Yin Wang +3
We have measured the Zeeman splitting of quantum levels in few-electron quantum dots (QDs) formed in narrow bandgap InSb nanowires via the Schottky barriers at the contacts under a…
Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale
Dong Pan, Ji-Yin Wang, Wei Zhang +7
Here, we demonstrate an approach that provides a precise control of the dimension of InAs from one-dimensional nanowires to wafer-scale free-standing two-dimensional nanosheets, wh…
Gate defined quantum dot realized in a single crystalline InSb nanosheet
Jianhong Xue, Yuanjie Chen, Dong Pan +4
Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological qua…
Anisotropic Pauli spin-blockade effect and spin-orbit interaction field in an InAs nanowire double quantum dot
Ji-Yin Wang, Guang-Yao Huang, Shaoyun Huang +4
We report on experimental detection of the spin-orbit interaction field in an InAs nanowire double quantum dot device. In the spin blockade regime, leakage current through the doub…
Coherent transport in a linear triple quantum dot made from a pure-phase InAs nanowire
Ji-Yin Wang, Shaoyun Huang, Guang-Yao Huang +3
A highly tunable linear triple quantum dot (TQD) device is realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. The electrical measurement…