Gate defined quantum dot realized in a single crystalline InSb nanosheet

Abstract

Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological quantum computing. Here we report on realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate and the quantum dot confinement is achieved by top gate technique. Transport measurements show a series of Coulomb diamonds, demonstrating that the quantum dot is well defined and highly tunable. Tunable, gate-defined, planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.

arXiv comment12 pages, 4 figures

References in corpus (19)

• Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
• Observation of Majorana Fermions in a Nb-InSb Nanowire-Nb Hybrid Quantum Device
• Superconductor-Nanowire Devices from Tunneling to the Multichannel Regime: Zero-Bias Oscillations and Magnetoconductance Crossover
• Spectroscopy of spin-orbit quantum bits in indium antimonide nanowires
• Electrical control over single hole spins in nanowire quantum dots
• Hard superconducting gap in InSb nanowires
• Towards high mobility InSb nanowire devices
• Supercurrent and multiple Andreev reflections in an InSb nanowire Josephson junction
• Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets
• Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device
• Gate-Tunable Quantum Dot in a High Quality Single Layer MoS${}_2$ Van der Waals Heterostructure
• Correlation-induced conductance suppression at level degeneracy in a quantum dot
• Electrotunable artificial molecules based on van der Waals heterostructures
• Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures
• Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions
• Anisotropic Pauli spin-blockade effect and spin-orbit interaction field in an InAs nanowire double quantum dot
• Formation of Long Single Quantum Dots in High Quality InSb Nanowires Grown by Molecular Beam Epitaxy
• Schottky barrier and contact resistance of InSb nanowire field effect transistors
• Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

Cited by in corpus (11)

• Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet
• Quantum transport in high-quality shallow InSb quantum wells
• Half-integer Shapiro steps in highly transmissive InSb nanoflag Josephson junctions
• Stable quantum dots in an InSb two-dimensional electron gas
• Exceptional degeneracies in non-Hermitian Rashba semiconductors
• Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well
• A double quantum dot defined by top gates in a single crystalline InSb nanosheet
• Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet
• Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
• Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions
• Spin splitting, Kondo correlation and singlet-doublet quantum phase transition in a superconductor-coupled InSb nanosheet quantum dot