164 citations · 941 across the 34 of their papers we have counts for
34 papers
Charge states, triple points and quadruple points in an InAs nanowire triple quantum dot revealed by an integrated charge sensor
Weijie Li, Zhihai Liu, Jingwei Mu +4
A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and…
Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
Li Zhang, Yuanjie Chen, Dong Pan +3
Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and character…
Electrically tunable spin-orbit interaction in an InAs nanosheet
Furong Fan, Yuanjie Chen, Dong Pan +2
We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer charac…
Large-composition-range pure-phase homogeneous InAsSb nanowires
Lianjun Wen, Dong Pan, Lei Liu +3
Narrow bandgap InAsSb nanowires show broad prospects for applications in wide spectrum infrared detectors, high-performance transistors and quantum computation. Realizi…
Suppressing Andreev bound state zero bias peaks using a strongly dissipative lead
Shan Zhang, Zhichuan Wang, Dong Pan +14
Hybrid semiconductor-superconductor nanowires are predicted to host Majorana zero modes, manifested as zero-bias peaks (ZBPs) in tunneling conductance. ZBPs alone, however, are not…
Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device
Huading Song, Zitong Zhang, Dong Pan +11
We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous works, thinner InAs na…
Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages
Jingwei Mu, Weijie Li, Shaoyun Huang +5
We report on the realization of a coupled quantum dot (QD) system containing two single QDs made in two adjacent InAs nanowires. One QD (sensor QD) is used as a charge sensor to de…
A double quantum dot defined by top gates in a single crystalline InSb nanosheet
Yuanjie Chen, Shaoyun Huang, Jingwei Mu +3
We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular…
Highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire
Jingwei Mu, Shaoyun Huang, Zhi-Hai Liu +7
Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other pl…
Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet
Yuanjie Chen, Shaoyun Huang, Dong Pan +4
A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap…
Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor
Weijie Li, Jingwei Mu, Shaoyun Huang +3
A linear triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized. The TQD and the charge sensor are built from two adjacent InAs nanowires by fine fin…
In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices
Dong Pan, Huading Song, Shan Zhang +13
Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero m…
Measurements of spin-orbit interaction in epitaxially grown InAs nanosheets
Furong Fan, Yuanjie Chen, Dong Pan +2
We report on a low-temperature transport study of a single-gate, planar field-effect device made from a free-standing, wurtzite-crystalline InAs nanosheet. The nanosheet is grown v…
Molecular Patterning and Directed Self-Assembly of Gold Nanoparticles on GaAs
Tianhan Liu, Timothy Keiper, Xiaolei Wang +4
The ability to create micro/nano patterns of organic self-assembled monolayers on semiconductor surfaces is crucial for fundamental studies and applications in a number of emerging…
Spin selectivity through chiral polyalanine monolayers on semiconductors
Tianhan Liu, Xiaolei Wang, Hailong Wang +11
Electrical generation of polarized spins in nonmagnetic materials is of great interest for the underlying physics and device potential. One such mechanism is chirality-induced spin…
Influence of chemical stability on the fabrication of MnGa-based devices
Lijun Zhu, Jianhua Zhao
Ferromagnetic films of L10-ordered MnGa have shown promise not only in the applications in ultrahigh-density magnetic recording and spintronic memories, oscillators, and sensors, b…
Interface-driven unusual anomalous Hall effect in MnxGa/Pt bilayers: No correlation with chiral spin structures
Kangkang Meng, Lijun Zhu, Zhenhu Jin +10
The effects of spin-orbit coupling and symmetry breaking at the interface between a ferromagnet and heavy metal are particularly important for spin-based information storage and co…
Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale
Dong Pan, Ji-Yin Wang, Wei Zhang +7
Here, we demonstrate an approach that provides a precise control of the dimension of InAs from one-dimensional nanowires to wafer-scale free-standing two-dimensional nanosheets, wh…
Static and Dynamic Signatures of Anisotropic Electronic Phase Separation in La2/3Ca1/3MnO3 Thin Films under Anisotropic Strain
Longqian Hu, Liuqi Yu, Peng Xiong +5
The electronic phase separation (EPS) of optimally doped La2/3Ca1/3MnO3 (LCMO) thin films under various degrees of anisotropic strain is investigated by static magnetotransport and…
Gate defined quantum dot realized in a single crystalline InSb nanosheet
Jianhong Xue, Yuanjie Chen, Dong Pan +4
Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological qua…
Anisotropic Pauli spin-blockade effect and spin-orbit interaction field in an InAs nanowire double quantum dot
Ji-Yin Wang, Guang-Yao Huang, Shaoyun Huang +4
We report on experimental detection of the spin-orbit interaction field in an InAs nanowire double quantum dot device. In the spin blockade regime, leakage current through the doub…
Coherent transport in a linear triple quantum dot made from a pure-phase InAs nanowire
Ji-Yin Wang, Shaoyun Huang, Guang-Yao Huang +3
A highly tunable linear triple quantum dot (TQD) device is realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. The electrical measurement…
Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime
Jiyin Wang, Shaoyun Huang, Zijin Lei +3
We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-p…
Engineering the polar magneto-optical Kerr effect in strongly strained L10-MnAl films
Lijun Zhu, Liane Brandt, Jianhua Zhao
We report the engineering of the polar magnetooptical (MO) Kerr effect in perpendicularly magnetized L10-MnAl epitaxial films with remarkably tuned magnetization, strain, and struc…