27 citations · 66 across the 5 of their papers we have counts for
13 papers
Large-composition-range pure-phase homogeneous InAsSb nanowires
Lianjun Wen, Dong Pan, Lei Liu +3
Narrow bandgap InAsSb nanowires show broad prospects for applications in wide spectrum infrared detectors, high-performance transistors and quantum computation. Realizi…
Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet
Yuanjie Chen, Shaoyun Huang, Dong Pan +4
A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap…
Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor
Weijie Li, Jingwei Mu, Shaoyun Huang +3
A linear triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized. The TQD and the charge sensor are built from two adjacent InAs nanowires by fine fin…
Measurements of spin-orbit interaction in epitaxially grown InAs nanosheets
Furong Fan, Yuanjie Chen, Dong Pan +2
We report on a low-temperature transport study of a single-gate, planar field-effect device made from a free-standing, wurtzite-crystalline InAs nanosheet. The nanosheet is grown v…
Molecular Patterning and Directed Self-Assembly of Gold Nanoparticles on GaAs
Tianhan Liu, Timothy Keiper, Xiaolei Wang +4
The ability to create micro/nano patterns of organic self-assembled monolayers on semiconductor surfaces is crucial for fundamental studies and applications in a number of emerging…
Influence of chemical stability on the fabrication of MnGa-based devices
Lijun Zhu, Jianhua Zhao
Ferromagnetic films of L10-ordered MnGa have shown promise not only in the applications in ultrahigh-density magnetic recording and spintronic memories, oscillators, and sensors, b…