Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet
arXiv:2012.06640 · doi:10.1038/s41699-020-00184-y
Abstract
A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin-orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin-orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin-orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices and topological quantum devices.
24 pages, 5 figures, Supplementary Information
References in corpus (7)
- Non-Abelian Anyons and Topological Quantum Computation
- Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
- Observation of Majorana Fermions in a Nb-InSb Nanowire-Nb Hybrid Quantum Device
- Coherent control of a single electron spin with electric fields
- Towards high mobility InSb nanowire devices
- Study of 0- phase transition in hybrid superconductor-InSb nanowire quantum dot devices
- Quantum transport in high-quality shallow InSb quantum wells