Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet
arXiv:2012.06640 · doi:10.1038/s41699-020-00184-y
Abstract
A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin-orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin-orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin-orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices and topological quantum devices.
arXiv comment24 pages, 5 figures, Supplementary Information
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Cited by in corpus (13)
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- Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well
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