27 citations · 90 across the 9 of their papers we have counts for
9 papers
Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
Li Zhang, Yuanjie Chen, Dong Pan +3
Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and character…
Electrically tunable spin-orbit interaction in an InAs nanosheet
Furong Fan, Yuanjie Chen, Dong Pan +2
We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer charac…
Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet
Li Zhang, Dong Pan, Yuanjie Chen +2
A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron trans…
Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages
Jingwei Mu, Weijie Li, Shaoyun Huang +5
We report on the realization of a coupled quantum dot (QD) system containing two single QDs made in two adjacent InAs nanowires. One QD (sensor QD) is used as a charge sensor to de…
A double quantum dot defined by top gates in a single crystalline InSb nanosheet
Yuanjie Chen, Shaoyun Huang, Jingwei Mu +3
We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular…
Highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire
Jingwei Mu, Shaoyun Huang, Zhi-Hai Liu +7
Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other pl…
Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet
Yuanjie Chen, Shaoyun Huang, Dong Pan +4
A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap…
Measurements of spin-orbit interaction in epitaxially grown InAs nanosheets
Furong Fan, Yuanjie Chen, Dong Pan +2
We report on a low-temperature transport study of a single-gate, planar field-effect device made from a free-standing, wurtzite-crystalline InAs nanosheet. The nanosheet is grown v…
Gate defined quantum dot realized in a single crystalline InSb nanosheet
Jianhong Xue, Yuanjie Chen, Dong Pan +4
Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological qua…