Formation of Long Single Quantum Dots in High Quality InSb Nanowires Grown by Molecular Beam Epitaxy

Abstract

We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO${}_2$ substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ~700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landé g-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ~300 $\mu$eV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.

19 pages, 5 figures

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Cited by in corpus (13)

• Nanomaterials for Quantum Information Science and Engineering
• Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets
• Study of 0-$\pi$ phase transition in hybrid superconductor-InSb nanowire quantum dot devices
• Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions
• Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet
• Schottky barrier and contact resistance of InSb nanowire field effect transistors
• Gate defined quantum dot realized in a single crystalline InSb nanosheet
• Electrical control of a spin qubit in InSb nanowire quantum dots: strongly suppressed spin relaxation in high magnetic field
• Microwave-assisted unidirectional superconductivity in Al-InAs nanowire-Al junctions under magnetic fields
• Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots
• Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
• Enhanced Thermoelectricity in Nanowires with inhomogeneous Helical states
• Spin splitting, Kondo correlation and singlet-doublet quantum phase transition in a superconductor-coupled InSb nanosheet quantum dot