Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes

Abstract

Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N = 3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B = 1.2 T. This means that, in the Kondo regime, an inverse effective magnetic field of B ~ 1.2 T can be applied to the QD in the parallel magnetic configuration of the ferromagnetic electrodes.

4 pages, 3 figures

References in corpus (5)

• Kondo effect in quantum dots coupled to ferromagnetic leads
• NRG study of the Kondo effect in the presence of itinerant-electron ferromagnetism
• Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads
• Nonequilibrium Kondo Effect in a Quantum Dot Coupled to Ferromagnetic Leads
• Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve

Cited by in corpus (8)

• Spin effects in single electron tunneling
• Effects of different geometries on the conductance, shot noise and tunnel magnetoresistance of double quantum dots
• Dicke-like effect in spin-polarized transport through coupled quantum dots
• Kondo effect in quantum dots coupled to ferromagnetic leads with noncollinear magnetizations: effects due to electron-phonon coupling
• Shot noise and tunnel magnetoresistance in multilevel quantum dots: Effects of cotunneling
• High Kondo temperature (TK ~ 80 K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes
• Spin-Polarized STM for a Kondo adatom
• Spin transport properties of a quantum dot coupled to ferromagnetic leads with noncollinear magnetizations