Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve

Abstract

We demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device. By using ferromagnetic Ni nano-gap electrodes, we observe the Coulomb blockade oscillations at a small bias voltage. In the vicinity of the Coulomb blockade peak, the TMR effect is significantly modulated and even its sign is switched by changing the gate voltage, where the sign of the TMR value changes at the resonant condition.

arXiv comment3 pages, 3 figures

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Cited by in corpus (36)

• Spin effects in single electron tunneling
• A spin quantum bit with ferromagnetic contacts for circuit QED
• Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes
• Spin-polarized current and shot noise in the presence of spin flip in a quantum dot via nonequilibrium Green's functions
• Effects of different geometries on the conductance, shot noise and tunnel magnetoresistance of double quantum dots
• Transport through quantum-dot spin valves containing magnetic impurities
• Spin-resolved Andreev transport through double-quantum-dot Cooper pair splitters
• Electronic waiting-time distribution of a quantum-dot spin valve
• Spin-induced charge correlations in transport through interacting quantum dots with ferromagnetic leads
• Probing the exchange field of a quantum-dot spin valve by a superconducting lead
• Spin-Related Current Suppression in a Semiconductor-Quantum-Dot Spin-Diode Structure
• Negative tunnel magnetoresistance and differential conductance in transport through double quantum dots
• Superconducting proximity effect and zero-bias anomaly in transport through quantum dots weakly attached to ferromagnetic leads
• Single-electron charge sensing in self-assembled quantum dots
• Tunnelling magnetoresistance anomalies of a Coulomb blockaded quantum dot
• Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes
• Shot noise and tunnel magnetoresistance in multilevel quantum dots: Effects of cotunneling
• Spin-dependent thermoelectric properties of a Kondo-correlated quantum dot with Rashba spin-orbit coupling
• Influence of spin waves on transport through a quantum-dot spin valve
• Theory of spin pumping through an interacting quantum dot tunnel coupled to a ferromagnet with time-dependent magnetization
• Large voltage-tunable spin valve based on a double quantum dot
• Pseudospin resonances reveal synthetic spin-orbit interaction
• Proposal for a correlation induced spin-current polarizer
• Iterative path-integral summations for the tunneling magnetoresistance in interacting quantum-dot spin valves
• Theory of transport through noncollinear single-electron spin-valve transistors
• Quantum Dot Spin Filter in Resonant Tunneling and Kondo Regimes
• Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device
• Spin-dependent current through a quantum dot from spin-polarized non-equilibrium quantum Hall edge channels
• The tunnel magnetoresistance in chains of quantum dots weakly coupled to external leads
• Multilevel coherences in quantum dots
• Spin polarized transport driven by square voltage pulses in a quantum dot system
• Multi-terminal spin-dependent transport in ballistic carbon nanotubes
• Generation of spin-polarized current using multi-terminated quantum dot with spin-orbit interaction
• Interaction-induced current asymmetries in resonant transport through interacting quantum-dot spin valves revealed by iterative summation of path integrals
• Gate-dependent spin-torque in a nanoconductor-based spin-valve
• Current fluctuations of noncollinear single-electron spin-valve transistors