Spin effects in single-electron tunneling in magnetic junctions

Abstract

Spin dependent single electron tunneling in ferromagnetic double junctions is analysed theoretically in the limit of sequential tunneling. The influence of discrete energy spectrum of the central electrode (island)on the spin accumulation, spin fluctuations and tunnel magnetoresistance is analysed numerically in the case of a nonmagnetic island. It is shown that spin fluctuations are significant in magnetic as well as in nonmagnetic junctions.

14 pages, 3 eps-figures included

Cited by in corpus (6)

• Spin-Dependent Transport Through An Interacting Quantum Dot
• Spin effects in single electron tunneling
• Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads
• Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve
• Spin effects in ferromagnetic single-electron transistors
• Spin accumulation in ferromagnetic single-electron transistors in the cotunneling regime