Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

Abstract

We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.

4 pages, 3 figures

References in corpus (1)

• Spin injection in a single metallic nanoparticle: a step towards nanospintronics

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• Shot noise and tunnel magnetoresistance in multilevel quantum dots: Effects of cotunneling
• Spin-polarized transport through weakly coupled double quantum dots in the Coulomb-blockade regime
• Proposal for a correlation induced spin-current polarizer
• Multi-terminal spin-dependent transport in ballistic carbon nanotubes