Electrical detection of spin accumulation in a p-type GaAs quantum well

Abstract

We report on experiments in which a spin-polarized current is injected from a $GaMnAs$ ferromagnetic electrode into a $GaAs$ quantum well through an AlAs barrier. The resulting spin polarization in the GaAs well is detected by measuring how the current, tunneling to a second $GaMnAs$ ferromagnetic electrode, depends on the orientation of its magnetization. Our results can be accounted for the non-relaxed spin splitting of the chemical potential, that is spin accumulation, in the $GaAs$ well. We discuss the conditions on the hole spin relaxation time in GaAs that are required to obtain the large effects we observe.

4 pages - 2 figues; one added note; some numbers corrected on page 1

References in corpus (4)

• Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
• Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor
• High Curie temperature GaMnAs obtained by resistance-monitored annealing
• Anisotropic Electrical Spin Injection in Ferromagnetic Semiconductor Heterostructures

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