Quantum-size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures

Abstract

We report on the resonant tunneling effect and the increase of tunneling magnetoresistance (TMR) induced by it in ferromagnetic-semiconductor GaMnAs quantum-well heterostructures. The observed quantum levels of the GaMnAs quantum well were successfully explained by the valence-band kp model with the p-d exchange interaction. It was also found that the Fermi level of the electrode injecting carriers is important to observe resonant tunneling in this system.

References in corpus (1)

• Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor

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