Bias voltage controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes

Abstract

We predict that the Curie temperature of a ferromagnetic resonant tunneling diode will decrease abruptly, by approximately a factor of two, when the downstream chemical potential falls below the quantum well resonance energy. This property follows from elementary quantum transport theory notions combined with a mean field description of diluted magnetic semiconductor ferromagnetism. We illustrate this effect by solving coupled non-equilibrium Green's function, magnetic mean-field, and electrostatic Poisson equations self-consistently to predict the bias voltage and temperature dependence of the magnetization of a model system.

20 pages, 7 figures, corrected typo in caption of figure 1

References in corpus (2)

• Detection of electrical spin injection by light-emitting diodes in top- and side-emission configuration
• EPR and ferromagnetism in diluted magnetic semiconductor quantum wells

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• Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes
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• Magnetoelectric bistabilities in ferromagnetic resonant tunneling structures
• Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs