activity
20042026
most citedEffect of Edge Roughness on Electronic Transport in Graphene Nanoribbon Channel Metal Oxide Semiconductor Field-Effect Transistors

125 citations · 181 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2026

Velocity-field characteristics and device performance in nanoscale amorphous oxide Thin-Film-Transistors

Chankeun Yoon, Xiao Wang, Jatin Vikram Singh +2

The electron velocity-electric field characteristics in short channel length (50-100 nm) amorphous oxide field-effect transistors (FETs) are described using measured experimental d…

cond-mat.mes-hall2025

Three-Dimensional Electrostatic and Quantum-Confinement Modeling of Silicon Nanowire Double Quantum Dots

Nilesh Pandey, Dipanjan Basu, Leonard F Register +1

We present a three-dimensional simulation study of silicon nanowire double quantum dots (DQDs) with leads at T = 2 K, which extends beyond traditional effective mass or quasi-1D an…

physics.app-ph2025

Engineering Cryogenic FETs: Addressing SCEs and Impact of Interface Traps Down to 2 K Temperature

Nilesh Pandey, Dipanjan Basu, Sanjay K. Banerjee

This paper presents the design and benchmarking of cryogenic bulk-FETs using an experimentally calibrated TCAD framework that integrates 2-D electrostatics and interface-trap effec…

quant-ph2024

Engineering Si-Qubit MOSFETs: A Phase-Field Modeling Approach Integrating Quantum-Electrostatics at Cryogenic Temperatures

Nilesh Pandey, Dipanjan Basu, Yogesh Singh Chauhan +2

This study employs advanced phase-field modeling to investigate Si-based qubit MOSFETs, integrating electrostatics and quantum mechanical effects. We adopt a comprehensive modeling…

cond-mat.mtrl-sci2013★ 31 cited

Evidence for hydrogen two-level systems in atomic layer deposition oxides

M. S. Khalil, M. J. A. Stoutimore, S. Gladchenko +10

Two-level system (TLS) defects in dielectrics are known to limit the performance of electronic devices. We study TLS using millikelvin microwave loss measurements of three atomic l…

cond-mat.mes-hall2007★ 125 cited

Effect of Edge Roughness on Electronic Transport in Graphene Nanoribbon Channel Metal Oxide Semiconductor Field-Effect Transistors

D. Basu, M. J. Gilbert, L. F. Register +2

Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal oxide semiconductor field-effect transistors (MOSFETs) are rep…