125 citations · 125 across the 1 of their papers we have counts for
3 papers
Effect of Edge Roughness on Electronic Transport in Graphene Nanoribbon Channel Metal Oxide Semiconductor Field-Effect Transistors
D. Basu, M. J. Gilbert, L. F. Register +2
Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal oxide semiconductor field-effect transistors (MOSFETs) are rep…
Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes
Swaroop Ganguly, A. H. MacDonald, L. F. Register +1
We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our co…
Bias voltage controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes
Swaroop Ganguly, L. F. Register, S. Banerjee +1
We predict that the Curie temperature of a ferromagnetic resonant tunneling diode will decrease abruptly, by approximately a factor of two, when the downstream chemical potential f…