Effect of Edge Roughness on Electronic Transport in Graphene Nanoribbon Channel Metal Oxide Semiconductor Field-Effect Transistors
arXiv:0712.3068 · doi:10.1063/1.2839330
Abstract
Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal oxide semiconductor field-effect transistors (MOSFETs) are reported. The addition of edge disorder significantly reduces ON-state currents and increases OFF-state currents, and introduces wide variability across devices. These effects decrease as ribbon widths increase and as edges become smoother. However the bandgap decreases with increasing width, thereby increasing the band-to-band tunneling mediated subthreshold leakage current even with perfect nanoribbons. These results suggest that without atomically precise edge control during fabrication, MOSFET performance gains through use of graphene will be difficult to achieve.
8 pages, 5 figures
References in corpus (6)
- Energy Band Gap Engineering of Graphene Nanoribbons
- Energy Gaps in Graphene Nanoribbons
- A Graphene Field-Effect Device
- Simulation of Graphene Nanoribbon Field Effect Transistors
- Effect of edge roughness in graphene nanoribbon transistors
- Scaling Behaviors of Graphene Nanoribbon FETs: A Three Dimensional Quantum Simulation Study
Cited by in corpus (16)
- Crystallographic Etching of Few-Layer Graphene
- Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene
- Charge Transport in Disordered Graphene-Based Low Dimensional Materials
- Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs
- Energy gaps, magnetism, and electric field effects in bilayer graphene nanoribbons
- Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene
- Spontaneous edge-defect formation and defect-induced conductance suppression in graphene nanoribbons
- Theoretical Study of Phosphorene Tunneling Field Effect Transistors
- Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications
- Wetting and energetics in nanoparticle etching of graphene
- Electric field induced injection and shift currents in zigzag graphene nanoribbons
- RF Transport Electromagnetic Properties of CVD Graphene from DC to 110 MHz
- Ballistic guided electrons against disorder in graphene nanoribbons
- Fundamental properties of Alkali-intercalated bilayer graphene nanoribbons
- Robustness of topologically protected transport in graphene-boron nitride lateral heterostructures
- The Bulk Penetration of Edge Properties in Two-Dimensional Materials