Dissipative Transport in Rough Edge Graphene Nanoribbon Tunnel Transistors

Abstract

We have studied quantum transport in Graphene Nanoribbon Tunnel Field-Effect Transistors. Unlike other studies on similar structures, we have included dissipative processes induced by inelastic electron-phonon scattering and edge roughness in the nanoribbon self-consistently within a non-equilibrium transport simulation. Our results show that the dissipative scattering imposes a limit to the minimum OFF current and a minimum subthreshold swing that can be obtained even for long channel lengths where direct source-drain tunneling is inhibited. The edge roughness, in presence of dissipative scattering, somewhat surprisingly, shows a classical behavior where it mostly reduces the maximum ON current achievable in this structure.

Accepted for publication in Applied Physics Letters

References in corpus (4)

• Computational Study of Tunneling Transistor Based on Graphene Nanoribbon
• Effect of Edge Roughness on Electronic Transport in Graphene Nanoribbon Channel Metal Oxide Semiconductor Field-Effect Transistors
• Influence of Phonon Scattering on the Performance of p-i-n Band-to-Band-Tunneling Transistors
• Dissipative Transport in Rough Edge Graphene Nanoribbon Tunnel Transistors

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