Role of Phonon Scattering in Graphene Nanoribbon Transistors: Non-Equilibrium Green's Function Method with Real Space Approach
arXiv:1104.1489 · doi:10.1063/1.3589365
Abstract
Mode space approach has been used so far in NEGF to treat phonon scattering for computational efficiency. Here we perform a more rigorous quantum transport simulation in real space to consider interband scatterings as well. We show a seamless transition from ballistic to dissipative transport in graphene nanoribbon transistors by varying channel length. We find acoustic phonon (AP) scattering to be the dominant scattering mechanism within the relevant range of voltage bias. Optical phonon scattering is significant only when a large gate voltage is applied. In a longer channel device, the contribution of AP scattering to the dc current becomes more significant.
References in corpus (6)
- Energy Band Gap Engineering of Graphene Nanoribbons
- Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
- Simulation of Graphene Nanoribbon Field Effect Transistors
- Non-equilibrium Green's function treatment of phonon scattering in carbon nanotube transistors
- Scaling Behaviors of Graphene Nanoribbon FETs: A Three Dimensional Quantum Simulation Study
- Ballisticity of nanotube FETs: Role of phonon energy and gate bias
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