Influence of Phonon Scattering on the Performance of p-i-n Band-to-Band-Tunneling Transistors

Abstract

Power dissipation has become a major obstacle in performance scaling of modern integrated circuits, and has spurred the search for devices operating at lower voltage swing. In this letter, we study p-i-n band-to-band tunneling field effect transistors (TFET) taking semiconducting carbon nanotubes as the channel material. The on-current of these devices is mainly limited by the tunneling barrier properties, and phonon scattering has only a moderate effect. We show, however, that the off-current is limited by phonon absorption assisted tunneling, and thus is strongly temperature-dependent. Subthreshold swings below the 60mV/decade conventional limit can be readily achieved even at room temperature. Interestingly, although subthreshold swing degrades due to the effects of phonon scattering, it remains low under practical biasing conditions.

arXiv comment14 pages, 3 figures

References in corpus (4)

• Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
• Non-equilibrium Green's function treatment of phonon scattering in carbon nanotube transistors
• Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors
• Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon assisted tunneling

Cited by in corpus (11)

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• Computational Study of Tunneling Transistor Based on Graphene Nanoribbon
• Trap assisted tunneling and its effect on subthreshold swing of tunnel field effect transistors
• Dissipative Transport in Rough Edge Graphene Nanoribbon Tunnel Transistors
• Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons
• Büttiker probes and the Recursive Green's Function; an efficient approach to include dissipation in general configurations
• Engineering interband tunneling in nanowires with diamond cubic or zincblende crystalline structure based on atomistic modeling
• Transmission Engineering as a route to Subthermal Switching