Influence of Phonon Scattering on the Performance of p-i-n Band-to-Band-Tunneling Transistors

Abstract

Power dissipation has become a major obstacle in performance scaling of modern integrated circuits, and has spurred the search for devices operating at lower voltage swing. In this letter, we study p-i-n band-to-band tunneling field effect transistors (TFET) taking semiconducting carbon nanotubes as the channel material. The on-current of these devices is mainly limited by the tunneling barrier properties, and phonon scattering has only a moderate effect. We show, however, that the off-current is limited by phonon absorption assisted tunneling, and thus is strongly temperature-dependent. Subthreshold swings below the 60mV/decade conventional limit can be readily achieved even at room temperature. Interestingly, although subthreshold swing degrades due to the effects of phonon scattering, it remains low under practical biasing conditions.

14 pages, 3 figures

References in corpus (1)

• Non-equilibrium Green's function treatment of phonon scattering in carbon nanotube transistors

Cited by in corpus (4)

• Energy Dissipation and Transport in Nanoscale Devices
• Performance comparison between p-i-n tunneling transistors and conventional MOSFETs
• On the possibility of obtaining MOSFET-like performance and sub-60 mV/decade swing in 1D broken-gap tunnel transistors
• Computational Study of Tunneling Transistor Based on Graphene Nanoribbon