Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors

Abstract

Electronic transport in a carbon nanotube (CNT) metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the non-equilibrium Green's functions method with the account of electron-phonon scattering. For MOSFETs, ambipolar conduction is explained via phonon-assisted band-to-band (Landau-Zener) tunneling. In comparison to the ballistic case, we show that the phonon scattering shifts the onset of ambipolar conduction to more positive gate voltage (thereby increasing the off current). It is found that the subthreshold swing in ambipolar conduction can be made as steep as 40mV/decade despite the effect of phonon scattering.

13 pages, 4 figures

References in corpus (2)

• Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
• A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors

Cited by in corpus (8)

• Performance comparison between p-i-n tunneling transistors and conventional MOSFETs
• Non-equilibrium Green's function treatment of phonon scattering in carbon nanotube transistors
• Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon assisted tunneling
• Influence of Phonon Scattering on the Performance of p-i-n Band-to-Band-Tunneling Transistors
• Dependence of Carbon Nanotube Field Effect Transistors Performance on Doping Level of Channel at Different Diameters: On/off current ratio
• Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering
• First-principles study of magnetism and electric field effects in 2D systems
• Ballistic Graphene Nanoribbon MOSFETs: a full quantum real-space simulation study