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20032019
most citedAnisotropic in-plane thermal conductivity observed in few-layer black phosphorus

665 citations · 3k across the 26 of their papers we have counts for

collaborators

26 papers

cond-mat.mtrl-sci2019★ 6 cited

The use of strain and grain boundaries to tailor phonon transport properties: A first principles study of 2H-phase (Part II)

Evan Witkoske, Zhen Tong, Yining Feng +3

Transparent oxide materials, such as , a p-type transparent conducting oxide (TCO), have recently been studied for high temperature thermoelectric power generators and c…

cond-mat.mtrl-sci2019★ 11 cited

Limitations of zT as a Figure of Merit for Nanostructured Thermoelectric Materials

Xufeng Wang, Mark Lundstrom

A numerical study of thermoelectric nanocomposites is presented. Thermoelectric properties as a function of average grain size or nanoparticle density are examined by simulating th…

cond-mat.mes-hall2016★ 84 cited

Thermal Transport at the Nanoscale - A Fourier's Law vs. Phonon Boltzmann Equation Study

Jan Kaiser, Tianli Feng, Jesse Maassen +3

Steady-state thermal transport in nanostructures with dimensions comparable to the phonon mean-free-path is examined. Both the case of contacts at different temperatures with no in…

cond-mat.mes-hall2015★ 665 cited

Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus

Zhe Luo, Jesse Maassen, Yexin Deng +5

Black phosphorus has been revisited recently as a new two-dimensional material showing potential applications in electronics and optoelectronics. Here we report the anisotropic in-…

cond-mat.mes-hall2013★ 49 cited

Engineering Nanowire n-MOSFETs at Lg < 8 nm

Saumitra Mehrotra, SungGeun Kim, Tillmann Kubis +3

As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major perfo…

cond-mat.mes-hall2011★ 56 cited

Substrate Gating of Contact Resistance in Graphene Transistors

Dionisis Berdebes, Tony Low, Yang Sui +2

Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that poss…