8 citations · 8 across the 3 of their papers we have counts for
9 papers · 1 filter
Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation
Tony Low, Mark S. Lundstrom, Dmitri E. Nikonov
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device…
Computational study of exciton generation in suspended carbon nanotube transistors
Siyuranga O. Koswatta, Vasili Perebeinos, Mark S. Lundstrom +1
Optical emission from carbon nanotube transistors (CNTFETs) has recently attracted significant attention due to its potential applications. In this paper, we use a self-consistent…
Ballistic Graphene Nanoribbon MOSFETs: a full quantum real-space simulation study
Gengchiau Liang, Neophytos Neophytou, Mark S. Lundstrom +1
A real-space quantum transport simulator for carbon nanoribbon (CNR) MOSFETs has been developed. Using this simulator, the performance of carbon nanoribbon (CNR) MOSFETs is examine…
Modeling of Nanoscale Devices
M. P. Anantram, M. S. Lundstrom, D. E. Nikonov
We aim to provide engineers with an introduction to the non-equilibrium Green's function (NEGF) approach, which provides a powerful conceptual tool and a practical analysis method…
Ballisticity of nanotube FETs: Role of phonon energy and gate bias
Siyuranga O. Koswatta, Sayed Hasan, Mark S. Lundstrom +2
We investigate the role of electron-phonon scattering and gate bias in degrading the drive current of nanotube MOSFETs. Our central results are: (i) Optical phonon scattering signi…
On the Validity of the Parabolic Effective-Mass Approximation for the Current-Voltage Calculation of Silicon Nanowire Transistors
Jing Wang, Anisur Rahman, Avik Ghosh +2
This paper examines the validity of the widely-used parabolic effective-mass approximation for computing the current-voltage (I-V) characteristics of silicon nanowire transistors (…