Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon assisted tunneling

Abstract

Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the non-equilibrium Green's functions formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (Y. Lu et al, J. Am. Chem. Soc., v. 128, p. 3518-3519, 2006), we have obtained strong evidence that BTBT in CNT-MOSFETs is dominated by optical phonon assisted inelastic transport, which can have important implications on the transistor characteristics. It is shown that under large biasing conditions two-phonon scattering may also become important.

20 pages, 5 figures

References in corpus (3)

• Non-equilibrium Green's function treatment of phonon scattering in carbon nanotube transistors
• A Three-dimensional simulation study of the performance of Carbon Nanotube Field Effect Transistors with doped reservoirs and realistic geometry
• Ballisticity of nanotube FETs: Role of phonon energy and gate bias

Cited by in corpus (7)

• Energy Dissipation and Transport in Nanoscale Devices
• Performance comparison between p-i-n tunneling transistors and conventional MOSFETs
• Non-equilibrium Green's function treatment of phonon scattering in carbon nanotube transistors
• A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization
• Influence of Phonon Scattering on the Performance of p-i-n Band-to-Band-Tunneling Transistors
• Avalanche-Induced Current Enhancement in Semiconducting Carbon Nanotubes
• First-principles study of magnetism and electric field effects in 2D systems