606 citations · 3.1k across the 31 of their papers we have counts for
31 papers
A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current
Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao +12
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process.…
A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current
Zehao Lin, Mengwei Si, Vahid Askarpour +12
High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio freque…
The use of strain to tailor electronic thermoelectric transport properties: A first principles study of 2H-phase CuAlO2
Evan Witkoske, David Guzman, Yining Feng +3
Using first principles calculations, the use of strain to adjust electronic transport and the resultant thermoelectric (TE) properties is discussed using 2H phase CuAlO2 as a test…
LanTraP: A code for calculating thermoelectric transport properties with the Landauer formalism
Xufeng Wang, Evan Witkoske, Jesse Maassen +1
A code for calculating the semi-classical thermoelectric and electronic transport properties is described. It uses the Landauer transport theory, which is equivalent to the Boltzma…
Universal Behavior of the Thermoelectric Figure of Merit, zT, vs. Quality Factor
Evan Witkoske, Xufeng Wang, Jesse Maassen +1
To increase the performance of thermoelectric materials, the electronic parameters in the figure of merit must be improved. In this paper, we use full, numerical band structures an…
On the Calculation of Lorenz Numbers for Complex Thermoelectric Materials
Xufeng Wang, Vahid Askarpour, Jesse Maassen +1
A first-principles informed approach to the calculation of Lorenz numbers for complex thermoelectric materials is presented and discussed. Example calculations illustrate the impor…