39 citations · 70 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2004
A Quantum Mechanical Approach for the Simulation of Si/SiO2 Interface Roughness Scattering in Silicon Nanowire Transistors
Jing Wang, Eric Polizzi, Avik Ghosh +2
In this work, we present a quantum mechanical approach for the simulation of Si/SiO2 interface roughness scattering in silicon nanowire transistors (SNWTs). The simulation domain i…
cond-mat.mes-hall2003★ 39 cited
Towards Multi-Scale Modeling of Carbon Nanotube Transistors
Jing Guo, Supriyo Datta, Mark Lundstrom +1
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper…
cond-mat.mes-hall2003★ 31 cited
Predicted Performance Advantages of Carbon Nanotube Transistors with Doped Nanotubes as Source/Drain
Jing Guo, Ali Javey, Hongjie Dai +2
Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel. When the gate oxide thickness is reduced, such…