606 citations · 3.1k across the 31 of their papers we have counts for
22 papers · 1 filter
A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current
Zehao Lin, Mengwei Si, Vahid Askarpour +12
High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio freque…
Role of photon recycling in perovskite solar cells
Mohammad Ryyan Khan, Xufeng Wang, Reza Asadpour +2
Nearly perfect photon recycling helped GaAs cells achieve the highest efficiency ever reported for a solar cell. Recent reports of photon recycling in perovskite solar cells sugges…
Some Useful Relations for Analyzing Nanoscale MOSFETs Operating in the Linear Region
Mark Lundstrom, Xingshu Sun
Several equations used to model and characterize the linear region IV characteristics of nanoscale field-effect transistors are derived. The meaning of carrier mobility at the nano…
Modeling ballistic effects in frequency-dependent transient thermal transport using diffusion equations
Jesse Maassen, Mark Lundstrom
Understanding ballistic phonon transport effects in transient thermoreflectance experiments and explaining the observed deviations from classical theory remains a challenge. Diffus…
Gate-Tunable and Thickness-dependent Electronic and Thermoelectric Transport in few-layer MoS2
Morteza Kayyalha, Jesse Maassen, Mark Lundstrom +2
Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused o…
A Simple Boltzmann Transport Equation for Ballistic to Diffusive Transient Heat Transport
Jesse Maassen, Mark Lundstrom
Developing simplified, but accurate, theoretical approaches to treat heat transport on all length and time scales is needed to further enable scientific insight and technology inno…
Steady-State Heat Transport: Ballistic-to-Diffusive with Fourier's Law
Jesse Maassen, Mark Lundstrom
It is generally understood that Fourier's law does not describe ballistic phonon transport, which is important when the length of a material is similar to the phonon mean-free-path…
Electron-Phonon Scattering in Planar MOSFETs: NEGF and Monte Carlo Methods
Himadri S. Pal, Dmitri E. Nikonov, Raseong Kim +1
A formalism for incorporating electron-phonon scattering into the nonequilibrium Green's function (NEGF) framework that is applicable to planar MOSFETs is presented. Restructuring…
Scaling of the energy gap in pattern-hydrogenated graphene
Roberto Grassi, Tony Low, Mark Lundstrom
Recent experiments show that a substantial energy gap in graphene can be induced via patterned hydrogenation on an iridium substrate. Here, we show that the energy gap is roughly p…
An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach
Abhijeet Paul, Shuaib Salamat, Changwook Jeong +2
The Landauer approach provides a conceptually simple way to calculate the intrinsic thermoelectric (TE) parameters of materials from the ballistic to the diffusive transport regime…
Relating electronic structure to thermoelectric device performance
Shuaib Salamat, Abhijeet Paul, Mehdi Salmani-Jelodar +3
Realistic thermoelectric modeling and simulation tools are needed to explain the experiments and for device design. In this paper, we present a simple computational technique to ma…
Signatures of disorder in the minimum conductivity of graphene
Yang Sui, Tony Low, Mark Lundstrom +1
Graphene has been proposed as a promising material for future nanoelectronics because of its unique electronic properties. Understanding the scaling behavior of this new nanomateri…
p-i-n Tunnel FETs vs. n-i-n MOSFETs: Performance Comparison from Devices to Circuits
Yunfei Gao, Siyuranga O. Koswatta, Dmitri E. Nikonov +1
The band-to-band tunneling transistors have some performance advantages over the conventional MOSFETs due to the <60mV/dec sub-threshold slope. In this paper, carbon nanotubes are…
Performance comparison between p-i-n tunneling transistors and conventional MOSFETs
Siyuranga O. Koswatta, Mark S. Lundstrom, Dmitri E. Nikonov
Field-effect transistors based on band-to-band tunneling (BTBT) have gained a lot of recent interest due to their potential for reducing power dissipation in integrated circuits. I…
Influence of Phonon Scattering on the Performance of p-i-n Band-to-Band-Tunneling Transistors
Siyuranga O. Koswatta, Mark S. Lundstrom, Dmitri E. Nikonov
Power dissipation has become a major obstacle in performance scaling of modern integrated circuits, and has spurred the search for devices operating at lower voltage swing. In this…
Performance Analysis of a Ge/Si Core/Shell Nanowire Field Effect Transistor
Gengchiau Liang, Jie Xiang, Neerav Kharche +3
We analyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3s*d5 tight-binding treatment of th…
The role of self-heating and hot-phonons in metallic single walled carbon nanotubes
Sayed Hasan, Ashraf Alam, Mark Lundstrom
The role of self-heating and hot-phonons on electronic transport in metallic single walled carbon nanotube is examined by solving a coupled electron-optical phonon (OP) Boltzmann t…
A Quantum Mechanical Approach for the Simulation of Si/SiO2 Interface Roughness Scattering in Silicon Nanowire Transistors
Jing Wang, Eric Polizzi, Avik Ghosh +2
In this work, we present a quantum mechanical approach for the simulation of Si/SiO2 interface roughness scattering in silicon nanowire transistors (SNWTs). The simulation domain i…
Towards Multi-Scale Modeling of Carbon Nanotube Transistors
Jing Guo, Supriyo Datta, Mark Lundstrom +1
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper…
Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics
Ali Javey, Jing Guo, Damon B. Farmer +5
High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant Hf…
High-Field, Quasi-Ballistic Transport in Short Carbon Nanotubes
Ali Javey, Jing Guo, Magnus Paulsson +4
Single walled carbon nanotubes with Pd ohmic contacts and lengths ranging from several microns down to 10 nm are investigated by electron transport experiments and theory. The mean…
Predicted Performance Advantages of Carbon Nanotube Transistors with Doped Nanotubes as Source/Drain
Jing Guo, Ali Javey, Hongjie Dai +2
Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel. When the gate oxide thickness is reduced, such…