Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics

Abstract

High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped nanotube segments as source/drain electrodes. The combination of these elements affords high ON currents, subthreshold swings of ~ 70-80 mV/decade, and allows for low OFF currents and suppressed ambipolar conduction. The doped source and drain approach resembles that of MOSFETs and can impart excellent OFF states to nanotube FETs under aggressive vertical scaling. This presents an important advantage over devices with metal source/drain, or devices commonly referred to as Schottky barrier FETs.

References in corpus (4)

• Ballistic Transport in Metallic Nanotubes With Reliable Pd Ohmic Contacts
• Drain Voltage Scaling in Carbon Nanotube Transistors
• Lateral scaling in carbon nanotube field-effect transistors
• Electrostatic Engineering of Nanotube Transistors for Improved Performance

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