540 citations · 2.1k across the 12 of their papers we have counts for
12 papers
Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early-stage photovoltaic material
R. Jaramillo, Meng-Ju Sher, Benjamin K. Ofori-Okai +7
Materials research with a focus on enhancing the minority-carrier lifetime of the light-absorbing semiconductor is key to advancing solar energy technology for both early-stage and…
Torque magnetometry of an amorphous-alumina/strontium-titanate interface
S. L. Tomarken, A. F. Young, S. W. Lee +2
We report torque magnetometry measurements of an oxide heterostructure consisting of an amorphous AlO thin film grown on a crystalline SrTiO substrate (-AO/STO) by a…
Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs
Jiangjiang J. Gu, Xinwei Wang, Heng Wu +2
High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an…
20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec
J. J. Gu, X. W. Wang, H. Wu +5
In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equiva…
Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
Jiangjiang J. Gu, Heng Wu, Yiqun Liu +3
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport propertie…
First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach
Jiangjiang Gu, Yiqun Liu, Yanqing Wu +3
The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN g…