540 citations · 2.1k across the 12 of their papers we have counts for
6 papers · 1 filter
Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs
Jiangjiang J. Gu, Xinwei Wang, Heng Wu +2
High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an…
20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec
J. J. Gu, X. W. Wang, H. Wu +5
In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equiva…
Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
Jiangjiang J. Gu, Heng Wu, Yiqun Liu +3
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport propertie…
First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach
Jiangjiang Gu, Yiqun Liu, Yanqing Wu +3
The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN g…
Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics
Ali Javey, Jing Guo, Damon B. Farmer +5
High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant Hf…
A Low-Temperature Atomic Layer Deposition Liftoff Method for Microelectronic and Nanoelectronic Applications
M. J. Biercuk, D. J. Monsma, C. M. Marcus +2
We report a novel method for depositing patterned dielectric layers with sub-micron features using atomic layer deposition (ALD). The patterned films are superior to sputtered or e…