Crosstalk between nanotube devices: contact and channel effects

Abstract

At reduced dimensionality, Coulomb interactions play a crucial role in determining device properties. While such interactions within the same carbon nanotube have been shown to have unexpected properties, device integration and multi-nanotube devices require the consideration of inter-nanotube interactions. We present calculations of the characteristics of planar carbon nanotube transistors including interactions between semiconducting nanotubes and between semiconducting and metallic nanotubes. The results indicate that inter-tube interactions affect both the channel behavior and the contacts. For long channel devices, a separation of the order of the gate oxide thickness is necessary to eliminate inter-nanotube effects. Because of an exponential dependence of this length scale on dielectric constant, very high device densities are possible by using high-k dielectrics and embedded contacts.

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• Carbon Nanotubes as Schottky Barrier Transistors
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• Role of Fermi-level pinning in nanotube Schottky diodes
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Cited by in corpus (5)

• Graphene nanoribbons for quantum electronics
• Optically Modulated Conduction in Chromophore-Functionalized Single-Wall Carbon Nanotubes
• Quantifying Alignment and Quality of Graphene Nanoribbons: A Polarized Raman Spectroscopy Approach
• Electrostatic effects on contacts to carbon nanotube transistors
• Electrical Contacts to Three-Dimensional Arrays of Carbon Nanotubes