Role of Fermi-level pinning in nanotube Schottky diodes

Abstract

At semiconductor-metal junctions, the Schottky barrier height is generally fixed by "Fermi-level pinning". We find that when a semiconducting carbon nanotube is end-contacted to a metal (the optinal geometry for nanodevices), the behavior is radically different. Even when the Fermi level is fully "pinned" at the interface, the turn-on voltage is that expected for the unpinned junction. Thus the threshold may be adjusted for optimal device performance, which is not possible in planar contacts. Similar behavior is expected at heterojunctions between nanotubes and semiconductors.

4 pages, to appear in Physical Review Letters

References in corpus (2)

• Spin splitting and even-odd effects in carbon nanotubes
• Fermi-level alignment at metal-carbon nanotube interfaces: application to scanning tunneling spectroscopy

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