Electron transport in semiconducting carbon nanotubes with hetero-metallic contacts
arXiv:cond-mat/0501538 · doi:10.1088/0957-4484/16/1/002
Abstract
We present an atomistic self-consistent study of the electronic and transport properties of semiconducting carbon nanotube in contact with metal electrodes of different work functions, which shows simultaneous electron and hole doping inside the nanotube junction through contact-induced charge transfer. We find that the band lineup in the nanotube bulk region is determined by the effective work function difference between the nanotube channel and source/drain electrodes, while electron transmission through the SWNT junction is affected by the local band structure modulation at the two metal-nanotube interfaces, leading to an effective decoupling of interface and bulk effects in electron transport through nanotube junction devices.
Higher quality figures available at http://www.albany.edu/~yx152122
References in corpus (13)
- Carbon Nanotubes as Schottky Barrier Transistors
- Tuning carbon nanotube bandgaps with strain
- Electron-Phonon Scattering in Metallic Single-Walled Carbon Nanotubes
- High-Field, Quasi-Ballistic Transport in Short Carbon Nanotubes
- Microscopic study of electrical transport through individual molecules with metallic contacts: I. "Band" lineup, voltage drop and high-field transport
- Probability of anomalously large Bit-Error-Rate in long haul optical transmission
- Lateral scaling in carbon nanotube field-effect transistors
- Electrical Nanoprobing of Semiconducting Carbon Nanotubes using an Atomic Force Microscope
- End group effect on electrical transport through individual molecules: A microscopic study
- Transport through the Interface between a Semiconducting Carbon Nanotube and a Metal Electrode
- Scaling analysis of electron transport through metal-semiconducting carbon nanotube interfaces: Evolution from the molecular limit to the bulk limit
- Scaling analysis of Schottky barriers at metal-embedded semiconducting carbon nanotube interfaces
- Schottky barriers at metal-finite semiconducting carbon nanotube interfaces