Schottky barriers at metal-finite semiconducting carbon nanotube interfaces

Abstract

Electronic properties of metal-finite semiconducting carbon nanotube interfaces are studied as a function of the nanotube length using a self-consistent tight-binding theory. We find that the shape of the potential barrier depends on the long-range tail of the charge transfer, leading to an injection barrier thickness comparable to half of the nanotube length until the nanotube reaches the bulk limit. The conductance of the nanotube junction shows a transition from tunneling to thermally-activated transport with increasing nanotube length.

References in corpus (2)

• Carbon Nanotubes as Schottky Barrier Transistors
• Transport through the Interface between a Semiconducting Carbon Nanotube and a Metal Electrode

Cited by in corpus (6)

• Scaling analysis of electron transport through metal-semiconducting carbon nanotube interfaces: Evolution from the molecular limit to the bulk limit
• Scaling analysis of Schottky barriers at metal-embedded semiconducting carbon nanotube interfaces
• Electron transport in semiconducting carbon nanotubes with hetero-metallic contacts
• Theoretical studies of spin-dependent electrical transport through carbon nanotbes
• Nonequilibrium electron charging in carbon-nanotube-based molecular bridges
• Transport through the intertube link between two parallel carbon nanotubes