Scaling analysis of Schottky barriers at metal-embedded semiconducting carbon nanotube interfaces

Abstract

We present an atomistic self-consistent tight-binding study of the electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube channel length when the end of the nanotube wire is buried inside the electrodes. We show that the lineup of the nanotube band structure relative to the metal Fermi-level depends strongly on the metal work function but weakly on the details of the interface. We analyze the length-dependent transport characteristics, which predicts a transition from tunneling to thermally-activated transport with increasing nanotube channel length.

To appear in Phys.Rev.B Rapid Communications. Color figures available in PRB online version

References in corpus (8)

• Carbon Nanotubes as Schottky Barrier Transistors
• High-Field, Quasi-Ballistic Transport in Short Carbon Nanotubes
• Microscopic study of electrical transport through individual molecules with metallic contacts: I. "Band" lineup, voltage drop and high-field transport
• Probability of anomalously large Bit-Error-Rate in long haul optical transmission
• Lateral scaling in carbon nanotube field-effect transistors
• Electrical Nanoprobing of Semiconducting Carbon Nanotubes using an Atomic Force Microscope
• Transport through the Interface between a Semiconducting Carbon Nanotube and a Metal Electrode
• Schottky barriers at metal-finite semiconducting carbon nanotube interfaces

Cited by in corpus (7)

• Size-dependent effects on electrical contacts to nanotubes and nanowires
• Scaling analysis of electron transport through metal-semiconducting carbon nanotube interfaces: Evolution from the molecular limit to the bulk limit
• Enhanced Performance of Short-Channel Carbon Nanotube Field-Effect Transistors Due to Gate-Modulated Electrical Contacts
• Electron transport in semiconducting carbon nanotubes with hetero-metallic contacts
• Electrostatic effects on contacts to carbon nanotube transistors
• One-dimensional transport in hybrid metal-semiconductor nanotube systems
• Electrostatics of straight and bent nanotubes