Electrostatics of straight and bent nanotubes
arXiv:cond-mat/0507115 · doi:10.1103/PhysRevB.74.155410
Abstract
Response of a single-walled carbon nanotube to external electric field, F, is calculated analytically within the classical electrostatics. Field-induced charge density distribution is approximately linear along the axis of metallic nanotube and depends rather weakly, as ln(h/r), on the nanotube length, h, (here r is the nanotube radius). In a semiconducting nanotube with a gap, E_g, charge separation occurs as F exceeds the threshold value F_{th}=E_g/eh. For F>F_{th}, positively and negatively charged regions at the ends of nanotube are separated by a neutral strip in the middle. For bent nanotubes the number of neutral strips can be one or two depending on the direction of F.
arXiv comment5 pages, 3 figures; final version, minor changes
References in corpus (15)
- Excitonic Effects and Optical Spectra of Single-Walled Carbon Nanotubes
- Scaling of excitons in carbon nanotubes
- Tuning carbon nanotube bandgaps with strain
- Band Structure, Phonon Scattering and the Ultimate Performance of Single-Walled Carbon Nanotube Transistors
- Role of Fermi-level pinning in nanotube Schottky diodes
- Electron-electron interaction effects on optical excitations in semiconducting single-walled carbon nanotubes
- Electrical Contacts to Carbon Nanotubes Down to 1nm in Diameter
- Carbon Nanotubes as Nanoelectromechanical Systems
- The Ratio Problem in Single Carbon Nanotube Fluorescence Spectroscopy
- Electron Interactions and Scaling Relations for Optical Excitations in Carbon Nanotubes
- Schottky barriers in carbon nanotube heterojunctions
- Electrical Nanoprobing of Semiconducting Carbon Nanotubes using an Atomic Force Microscope
- Negative differential resistance in nanotube devices
- Fermi-level alignment at metal-carbon nanotube interfaces: application to scanning tunneling spectroscopy
- Scaling analysis of Schottky barriers at metal-embedded semiconducting carbon nanotube interfaces